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| PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot=1 Watt ZTX552 ZTX553 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation: at Tamb=25C derate above 25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX552 -100 -80 -5 -2 -1 1 5.7 E-Line TO92 Compatible ZTX553 -120 -100 UNIT V V V A A W mW/ C C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-onn Voltage SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO ZTX552 MIN. -100 -80 -5 -0.1 -0.1 -0.25 -1.1 -1.0 40 10 150 12 3-196 150 40 10 150 12 MAX. ZTX553 MIN. -120 -100 -5 -0.1 -0.1 -0.25 -1.1 -1.0 200 MHz MHz MAX. V V V A A UNIT CONDITIONS. IC=-100A IC=-10mA IE=-100A VCB=-80V VCB=-100V VEB=-4V IC=-150mA, IB=-15mA* IC=-150mA, IB=-15mA* IC=-150mA, VCE=-10V* IC=-150mA, VCE=-10V* IC=-1A, VCE=-10V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) VBE(on) V V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ZTX552 ZTX553 TYPICAL CHARACTERISTICS -0.8 td tr ns ns 100 200 ts IB1=IB2=IC/10 tf ts S nS 3 600 Switching time VCE(sat) - (Volts) -0.6 IC/IB=10 -0.4 80 160 tf 2 400 60 120 td 1 tr 200 40 80 -0.2 20 40 100 0 -0.001 0 -0.01 -0.1 -1 0 -0.01 0 -0.1 -1 0 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 100 hFE - Normalised Gain (%) -1.0 80 VCE=-10V 60 IC/IB=10 VBE(sat) - (Volts) -0.8 40 -0.6 20 -0.4 -0.001 -0.2 -0.01 -0.1 -1 -10 -0.001 -0.01 -0.1 -1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC -10 -1.2 VCE=-10V VBE(sat) v IC Single Pulse Test at Tamb=25C IC - Collector Current (Amps) VBE - (Volts) -1.0 -1 -0.8 -0.6 -0.1 D.C. 1s 100ms 10ms 1.0ms 100s -0.4 ZTX552 -0.0001 -0.001 -0.01 -0.1 -1 -0.01 -0.1 -1 -10 ZTX553 -100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-197 |
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